| 发明名称 |
Sram cell fabrication with interlevel Dielectric planarization |
| 摘要 |
A 4-T SRAM cell in which two layers of permanent SOG (with an intermediate oxide layer) are used to provide planarization between the first and topmost poly layers.
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| 申请公布号 |
USRE41670(E1) |
申请公布日期 |
2010.09.14 |
| 申请号 |
US20000488686 |
申请日期 |
2000.01.20 |
| 申请人 |
STMICROELECTRONICS, INC. |
发明人 |
NGUYEN LOI;SUNDARESAN RAVISHANKAR |
| 分类号 |
H01L29/34;H01L21/02;H01L21/3105;H01L21/70;H01L21/768;H01L21/8244;H01L23/48;H01L23/522 |
主分类号 |
H01L29/34 |
| 代理机构 |
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