发明名称 Film growth system and method
摘要 An apparatus for depositing a solid film onto a substrate from a reagent solution includes a reservoir of solution maintained at a low temperature to inhibit homogeneous reactions. The solution contains multiple ligands to control temperature stability and shelf life. The chilled solution is periodically dispensed onto a substrate positioned in a holder having a raised peripheral structure that retains a controlled volume of solution over the substrate. The solution is periodically replenished so that only the part of the solution directly adjacent to the substrate is heated. A heater maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the solution may be initiated. The apparatus may also dispense excess chilled solution to cool various components within the apparatus and minimize nucleation of solids in areas other than on the substrate. The apparatus is particularly suited to forming films of II-VI semiconductors.
申请公布号 US7793611(B2) 申请公布日期 2010.09.14
申请号 US20100656000 申请日期 2010.01.12
申请人 SISOM THIN FILMS LLC 发明人 OLADEJI ISAIAH O.
分类号 B05C11/00 主分类号 B05C11/00
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