发明名称 METHOD FOR DARKENING BAD PIXEL IN THIN FILM TRANSISTOR SUBSTRATE OF HORIZONTAL ELECTRONIC FIELD TYPE
摘要 <p>A method of darkening a defective pixel including a short between a source electrode and a drain electrode in a thin film transistor substrate includes forming a gate line and a data line on a substrate to define a pixel region; forming a thin film transistor at a crossing of the gate line and the data line, the thin film transistor having a gate electrode, a source electrode and a drain electrode; forming a pixel electrode and a common electrode in the pixel region; forming a common line provided in parallel to the gate line and connected to the common electrode; forming an extended part of the drain electrode in parallel to the gate line; and cutting the extended part along a cutting line.</p>
申请公布号 KR100982122(B1) 申请公布日期 2010.09.14
申请号 KR20030099809 申请日期 2003.12.30
申请人 发明人
分类号 G02F1/1343;G02F1/133;G02F1/136;G02F1/1362;G09G3/36;H01L29/786 主分类号 G02F1/1343
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