发明名称 METHOD FOR FORMING METAL OXIDE FILM AND METHOD FOR FORMING SECONDARY ELECTRON EMISSION FILM OF GAS DISCHARGE TUBE
摘要 According to the present invention, there is provided a method for forming a metal oxide film comprising, when a metal oxide film is formed by conducting a thermal treatment on a coating film containing an organic metal compound formed on an inner wall of a tube, performing an ultraviolet irradiation treatment or an ozone treatment on the coating film prior to or simultaneously with the thermal treatment.
申请公布号 KR100981946(B1) 申请公布日期 2010.09.14
申请号 KR20030054378 申请日期 2003.08.06
申请人 发明人
分类号 B05D3/06;H01J9/02;C03C17/25;C23C18/06;C23C18/12;C23C18/14;H01J1/70;H01J9/20;H01J11/00;H01J11/02;H01J11/18;H01J11/22;H01J11/34;H01J11/40 主分类号 B05D3/06
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