Semiconductor structure and fabrication method thereof

摘要

The invention provides a method for forming a semiconductor structure. A plurality of first type well regions is formed in the first type substrate. A plurality of second type well regions and a plurality of second type bar doped regions are formed in the first type substrate by a doping process using a mask. The second type bar doped regions are diffused to form a second type continuous region by annealing. The second type continuous region is adjoined with the first type well regions. A second type dopant concentration of the second type continuous region is smaller than a second type dopant concentration of the second type bar doped regions. A second type source/drain region is formed in the second type well region.