发明名称 Defect detection
摘要 A wafer having improved inspection sensitivity to foreign matter on a top-most surface of the wafer, as detected with a surface scanning optical inspection system that uses an inspection wavelength. The wafer includes a substantially homogenous first layer at the top-most surface of the wafer, the first layer having a first thickness. The first layer is at least partially transparent to the inspection wavelength. A substantially homogenous second layer immediately underlies the first layer, the second layer having a second thickness. The second layer is at least partially transparent to the inspection wavelength. A substrate immediately underlies the second layer. The first thickness and the second thickness are set in a combination that produces a local minimum of an electric field at the top-most surface and a local maximum of an electric field within one hundred nanometers above the top-most surface.
申请公布号 US7796805(B1) 申请公布日期 2010.09.14
申请号 US20050234974 申请日期 2005.09.26
申请人 KLA-TENCOR CORPORATION 发明人 KIRK MICHAEL D.;BIELLAK STEPHEN A.;SHORTT DAVID W.
分类号 G06K9/00 主分类号 G06K9/00
代理机构 代理人
主权项
地址