发明名称 Organic semiconductor device, field-effect transistor, and their manufacturing methods
摘要 An organic semiconductor device is provided which includes an organic semiconductor layer and an insulating layer. The insulating layer is made of a cured material formed from a composition containing a resin and a crosslinking agent. The resin contains an organic resin having a hydroxyl group. The crosslinking agent contains a compound having at least two crosslinking groups. At least one of the crosslinking groups is a methylol group or an NH group. The composition contains the crosslinking agent in the range of 15 to 45 percent by weight relative to 100 parts by weight in total of the resin and the crosslinking agent.
申请公布号 US7795636(B2) 申请公布日期 2010.09.14
申请号 US20090410215 申请日期 2009.03.24
申请人 CANON KABUSHIKI KAISHA 发明人 NAKAYAMA TOMONARI;OHNISHI TOSHINOBU;MIURA DAISUKE
分类号 H01L51/40 主分类号 H01L51/40
代理机构 代理人
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