发明名称 |
Error detection, documentation, and correction in a flash memory device |
摘要 |
A memory device has an error documentation memory array that is separate from the primary memory array. The error documentation memory array stores data relating to over-programmed bits in the primary array. When the over-programmed bits in the primary array are erased, the error documentation memory array is erased as well, deleting the documentation data relating to the over-programmed bits.
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申请公布号 |
US7797597(B2) |
申请公布日期 |
2010.09.14 |
申请号 |
US20060444820 |
申请日期 |
2006.06.01 |
申请人 |
MICRON TECHNOLOGY , INC. |
发明人 |
ROOHPARVAR FRANKIE F. |
分类号 |
G11C29/00;G11C7/00;G11C16/34;G11C29/52 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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