发明名称 Error detection, documentation, and correction in a flash memory device
摘要 A memory device has an error documentation memory array that is separate from the primary memory array. The error documentation memory array stores data relating to over-programmed bits in the primary array. When the over-programmed bits in the primary array are erased, the error documentation memory array is erased as well, deleting the documentation data relating to the over-programmed bits.
申请公布号 US7797597(B2) 申请公布日期 2010.09.14
申请号 US20060444820 申请日期 2006.06.01
申请人 MICRON TECHNOLOGY , INC. 发明人 ROOHPARVAR FRANKIE F.
分类号 G11C29/00;G11C7/00;G11C16/34;G11C29/52 主分类号 G11C29/00
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