发明名称 Laser processing method
摘要 Method of processing, e.g., laser annealing, objects such as semiconductor devices with pulsed lasers with high production yield and high reproducibility so as to obtain good characteristics stably. The pulse width of the irradiated pulse beam is set to more than 30 nsec to stabilize the processing. To achieve a pulse width exceeding 30 nsec, plural lasers are connected in series or in parallel and excited successively.
申请公布号 USRE41690(E1) 申请公布日期 2010.09.14
申请号 US20010860499 申请日期 2001.05.21
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ZHANG HONGYONG
分类号 H01S3/10;B23K26/06;H01L21/20;H01L21/265;H01L21/268;H01S3/00;H01S3/13;H01S3/30;H01S5/20 主分类号 H01S3/10
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