发明名称 |
Control of set/reset pulse in response to peripheral temperature in PRAM device |
摘要 |
A driver circuit for a PRAM (phase-change random access memory) device includes a write driver that generates a set/reset current in response to a set/reset pulse. In addition, a temperature compensator controls a pulse width of the set/reset pulse in response to a peripheral temperature of the PRAM device. For example, the temperature compensator maintains the pulse width to be substantially constant irrespective of the peripheral temperature. In another example, the temperature compensator decreases the pulse width for higher peripheral temperature.
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申请公布号 |
US7796425(B2) |
申请公布日期 |
2010.09.14 |
申请号 |
US20070985975 |
申请日期 |
2007.11.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI BYUNG-GIL;KWAK CHOONG-KEUN;CHO WOO-YEONG |
分类号 |
G11C11/00;G11C13/00;G11C7/04;G11C11/4193;G11C11/4197;G11C15/00;G11C16/02;H01L27/10;H01L27/105;H01L45/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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