| 摘要 |
A method for forming an electrode structure in a light emitting device is disclosed. The method includes the steps of: forming a mask material layer having an opening; depositing a first material layer on the mask material layer and on a portion of a compound semiconductor layer exposed through the bottom of the opening by a physical vapor deposition method reducing the particle density so that the mean free path for collision is long; depositing a second material layer on the first material layer on the mask material layer, on the first material layer deposited on the bottom of the opening, and on a portion of the compound semiconductor layer exposed through the bottom of the opening by a vapor deposition method other than the physical vapor deposition method; and removing the mask material layer and the first and second material layers deposited on the mask material layer.
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