| 摘要 |
PURPOSE: A semiconductor device is provided to obtain a highly integrated semiconductor device by forming a multi-layered resistance element in order to reduce the occupied area of the resistance element. CONSTITUTION: A semiconductor substrate(100) includes a first region(102) and a second region(104). A first resistance film(151) and a second resistance film(152) are stacked on the first region of the semiconductor substrate. A first plug(171) is connected with the first resistance film. A second plug(172) is connected with the first resistance film and the second resistance film. A third plug(173) is connected with the second resistance film. A third resistance film(153) is stacked on the second resistance film. |
