CRUCIBLE, APPARATUS, AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS

摘要

Provided is a crucible for producing silicon carbide single crystals with which silicon carbide single-crystal ingots having good crystallinity can be grown with stability at a high yield. Also provided are an apparatus and a method for producing silicon carbide single crystals. The crucible for producing silicon carbide single crystals has a crucible container for holding the silicon carbide starting material and a crucible lid whereon the seed crystals are deposited. The silicon carbide starting materials are subjected to sublimation inside the crucible container and the gas of silicon carbide sublimation is fed to the seed crystals to promote the growth of silicon carbide single crystals on the seed crystals. The crucible for producing silicon carbide single crystals has screw parts where the crucible container and the crucible lid screw together, and a gas of sublimation evacuation mechanism with which it is possible to adjust the flow rate by the relative turning of these screw parts. The apparatus for producing silicon carbide single crystals comprises such a crucible and the method for producing silicon carbide single crystals employs the apparatus.