发明名称 |
GAS FLOW SET-UP FOR MULTIPLE, INTERACTING REACTIVE SPUTTER SOURCES |
摘要 |
A method and apparatus for physical vapor deposition of films on a substrate is provided. The apparatus comprises a series of connected sputtering chambers through which a substrate passes to undergo sequential deposition processes. The chambers have passages through which the substrates move, and through which process gases may leak. Target gas flows to each chamber are established by operating each chamber while adjacent chambers are idle, measuring the extent of gas communication between the chambers, and reducing the flows by an amount based on the extent of gas leakage. |
申请公布号 |
WO2010102101(A2) |
申请公布日期 |
2010.09.10 |
申请号 |
WO2010US26199 |
申请日期 |
2010.03.04 |
申请人 |
APPLIED MATERIALS, INC.;GREENE, PHILIP ,A. |
发明人 |
GREENE, PHILIP ,A. |
分类号 |
H01L21/203;H01L21/66 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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