发明名称 ORGANIC SEMICONDUCTOR MATERIAL AND ORGANIC THIN FILM TRANSISTOR
摘要 <p>Disclosed is an organic semiconductor material which has high carrier mobility and high stability and can be formed into a film by a simple production process. Also disclosed is an organic thin film transistor, in which the organic semiconductor material is used in an organic semiconductor layer. Specifically disclosed is an organic semiconductor material characterized by comprising a compound having a structure represented by general formula (1). (In the formula, L represents a bivalent linkage group and has a structure formed by any one group selected from an unsubstituted or substituted vinylene group, an acethylene group, an unsubstituted or substituted aromatic cyclic hydrocarbon residue, an unsubstituted or substituted aromatic fused ring hydrocarbon residue, an unsubstituted or substituted aromatic heterocyclic hydrocarbon residue and an unsubstituted or substituted fused aromatic heterocyclic hydrocarbon residue or a combination of two or more of the aforementioned groups; R1 represents a carbonyl group, a cyano group, or a fluorine-substituted alkyl group having 1 to 12 carbon atoms; and R2 represents a halogen atom, a cyano group, a carbonyl group, or an acetyl group.)</p>
申请公布号 WO2010101224(A1) 申请公布日期 2010.09.10
申请号 WO2010JP53577 申请日期 2010.03.04
申请人 KYUSHU INSTITUTE OF TECHNOLOGY;NAGAMATSU, SHUICHI;TAKASHIMA, WATARU;OKAUCHI, TATSUO;MORIGUCHI, TETSUJI;MIZOGUCHI, KATSUHIRO;KANETO, KEIICHI;HAYASE, SHUZI 发明人 NAGAMATSU, SHUICHI;TAKASHIMA, WATARU;OKAUCHI, TATSUO;MORIGUCHI, TETSUJI;MIZOGUCHI, KATSUHIRO;KANETO, KEIICHI;HAYASE, SHUZI
分类号 H01L51/30;C07C255/35;C07D333/24;C07D495/04;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L51/30
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