TERNARY CONTENT ADDRESSABLE MEMORY USING PHASE CHANGE DEVICES
摘要
<p>A content addressable memory device with a plurality of memory cells storing ternary data values of high, low, and don't care. An aspect of the content addressable memory device is the use of first memory elements and second memory elements in the memory cells. The first and second memory elements are electrically coupled in parallel circuit to a match-line. The first memory elements are coupled to first word-lines and the second memory elements are coupled to second word-lines. The first memory elements are configured to store low resistance states if the ternary data value is low and high resistance states if the ternary data value is either high or don't care. The second memory elements are configured to store the low resistance states if the ternary data value is high and the high resistance states if the ternary data value is either low or don't care.</p>
申请公布号
WO2010100000(A1)
申请公布日期
2010.09.10
申请号
WO2010EP50862
申请日期
2010.01.26
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;LAM, CHUNG, HON;MONTOYE, ROBERT, KEVIN;RAJENDRAN, BIPIN;JI, BRIAN
发明人
LAM, CHUNG, HON;MONTOYE, ROBERT, KEVIN;RAJENDRAN, BIPIN;JI, BRIAN