发明名称 |
HIGH CONCENTRATION NITROGEN-CONTAINING GERMANIUM TELLURIDE BASED MEMORY DEVICES AND PROCESSES OF MAKING |
摘要 |
A PCM device has the composition GexTeyNzAm deposited onto a substrate, where x is about 40% to about 60%, y is about 30% to about 49%, and z is about 5% to about 20% and more preferably about 5% to about 40%. The component represented as A is optional and representative of an element of Sb, Sn, In, Ga, or Zn, and m is up to about 15%. The composition is in the form of a film, and the nitrogen allows for the substantially conformal deposition of the film onto the substrate. A CVD process for depositing the PCM comprises delivering a Ge-based precursor and a Te-based precursor in vapor form to a CVD chamber, heating and pressurizing the chamber, and depositing the film onto a substrate. In making a phase change device using this process, the film is annealed and polished. |
申请公布号 |
WO2010065874(A3) |
申请公布日期 |
2010.09.10 |
申请号 |
WO2009US66805 |
申请日期 |
2009.12.04 |
申请人 |
ATMI;ZHENG, JUN-FEI;ROEDER, JEFFREY R.;LI, WEIMIN;CHEN, PHIL |
发明人 |
ZHENG, JUN-FEI;ROEDER, JEFFREY R.;LI, WEIMIN;CHEN, PHIL |
分类号 |
H01L21/8247;H01L21/205;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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