VERTICAL HALL EFFECT SENSOR WITH CURRENT FOCUS

摘要

A complimentary metal oxide semiconductor (CMOS) sensor system (100) in one embodiment includes a doped substrate (102), a doped central island (108) extending downwardly within the doped substrate from an upper surface of the doped substrate, and a first doped outer island (106) extending downwardly within the doped substrate from the upper surface of the doped substrate, the first outer island electrically isolated from the central island within an upper portion of the substrate, and electrically coupled to the central island within a lower portion of the substrate.