发明名称 THIN FILM TRANSISTOR SUSTRATE
摘要 PURPOSE: A thin film transistor substrate is provided to prevent the flickering phenomenon of a column and a vertical cross-talk phenomenon by arranging pixels along a row direction and a column direction. CONSTITUTION: A first data line(171a) is expanded to a first direction. A first semiconductor pattern(151a) and a second semiconductor pattern(151b) are located between the first date line and a second data line(171b). A first pixel electrode(191a) and a second pixel electrode(191b) are located on an insulating film. The first and the second pixel electrodes are located between the second data line and a third data line(171c). A first gate line(121a) and a first charge sharing gate line(126a) are located between the first and the second pixel electrodes.
申请公布号 KR20100098981(A) 申请公布日期 2010.09.10
申请号 KR20090017724 申请日期 2009.03.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DONG GYU
分类号 H01L29/786 主分类号 H01L29/786
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