发明名称 |
THIN FILM TRANSISTOR SUSTRATE |
摘要 |
PURPOSE: A thin film transistor substrate is provided to prevent the flickering phenomenon of a column and a vertical cross-talk phenomenon by arranging pixels along a row direction and a column direction. CONSTITUTION: A first data line(171a) is expanded to a first direction. A first semiconductor pattern(151a) and a second semiconductor pattern(151b) are located between the first date line and a second data line(171b). A first pixel electrode(191a) and a second pixel electrode(191b) are located on an insulating film. The first and the second pixel electrodes are located between the second data line and a third data line(171c). A first gate line(121a) and a first charge sharing gate line(126a) are located between the first and the second pixel electrodes. |
申请公布号 |
KR20100098981(A) |
申请公布日期 |
2010.09.10 |
申请号 |
KR20090017724 |
申请日期 |
2009.03.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, DONG GYU |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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