SEMICONDUCTOR SENSOR AND THE MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor sensor and a method for manufacturing the same are provided to vary the shape and the dimension of an insulating layer, which is remained on the periphery of a sensing region, by regulating a timing point for converting a rapid etching operation to a slow etching operation. CONSTITUTION: A first semiconductor layer(22) is formed. An insulating layer(23) is formed on the first semiconductor layer. A second semiconductor layer(24) is formed on the insulating layer. A concave part(26) from the lower side of the first semiconductor layer to the upper side of the insulating layer is formed. The sensing region of the second semiconductor layer(25) is exposed excluding the upper periphery of the concave part.