LOW-VOLTAGE TRANSIENT-VOLTAGE SUPRESSION DEVICES HAVING BI-DIRECTIONAL BREAKEDOWN PROTECTION AND MANUFACTURING METHOD THEREBY

摘要

PURPOSE: A low voltage transient voltage suppressing device including a bidirectional breakdown protection function and a manufacturing method thereof are provided to easily control the depth of a contact surface between an intermediate semiconductor layer and a lower semiconductor layer by controlling the thickness of an epitaxial growth layer. CONSTITUTION: An intermediate semiconductor layer(120) with a p type conductivity is formed on a lower semiconductor layer. An insulation unit includes a n type conductivity and is arranged on both upper sides of the intermediate semiconductor layer. An upper semiconductor layer is formed by changing the intermediate part of the intermediate semiconductor layer into an n+ type conductive layer. A first electrode(510) is formed by depositing a metal on the upper semiconductor layer. A second electrode is formed by depositing the metal on the lower semiconductor layer.