| 摘要 |
FIELD: electricity. ^ SUBSTANCE: method for manufacturing of multilayer field emitter consists in production of tungsten spike by means of chemical etching of tungsten thread by alkaline solution, fixation of tungsten spike in heating element, cleaning of tungsten spike in vacuum by means of heating until polycrystalline lattice of pure tungsten is obtained and further sputtering. Sputtering is carried out by serial application of TiO2 with thickness of not more than two monolayers, and then a layer of Cs, with thickness of not more than a monolayer, besides emission current is monitored up to its maximum value of 2-3 microampere while distance between anode and tungsten spike is within the limits of 23-27 mm and voltage between them makes around 60.5 kV. Method may be used to develop flat field emission displays for monitors and TV sets, which are not inferior to electronic beam displays in resolution and brightness, magnetrons with glow-free field radiating cathode, which make it possible to develop up-to-date and cost-efficient radars, high-frequency field emission diodes. ^ EFFECT: improved efficiency and stability of emission with reduction of threshold value of electric field intensity. ^ 2 cl, 3 dwg, 2 tbl, 2 ex |
