| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor of inverted staggered structure which is improved in productivity and excellent in transistor characteristics, and to provide a method of manufacturing the same. SOLUTION: The thin film transistor of the inverted staggered structure has a crystalline semiconductor film 40 having a source region 41, a drain region 42 and a channel region 43. Furthermore, the thin film transistor has an insulating film 5 formed on the channel region 43 and a silicide layer 61 formed on the source region 41 and the drain region 42. Then the channel region 43 is formed of crystal grains smaller than crystal grains of the source region 41 and the drain region 42. COPYRIGHT: (C)2010,JPO&INPIT |
