发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To inhibit a diffusion of particles into a processing chamber and reduce a cost required for exchanging a gas filter. SOLUTION: A substrate processing apparatus has a gas introduction means for introducing at least one kind of processing gas into the processing chamber which accommodates a substrate. The gas introduction means has: a gas introduction nozzle which is disposed in the processing chamber; a gas rectifier nozzle which is connected to an end of the gas introduction nozzle and has a gas introduction port for introducing the processing gas into the processing chamber; and a filter which is arranged inside gas rectifier nozzle. The processing gas is introduced to the gas rectifier nozzle from the gas introduction nozzle through the filter and is introduced into the processing chamber from the gas introduction port. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010199160(A) 申请公布日期 2010.09.09
申请号 JP20090039906 申请日期 2009.02.23
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TAKEBAYASHI YUJI;OKADA ITARU;NAKAGAWA TAKASHI
分类号 H01L21/31;C23C16/455;H01L21/8242;H01L27/108 主分类号 H01L21/31
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