发明名称 |
SUBSTRATE PROCESSING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To inhibit a diffusion of particles into a processing chamber and reduce a cost required for exchanging a gas filter. SOLUTION: A substrate processing apparatus has a gas introduction means for introducing at least one kind of processing gas into the processing chamber which accommodates a substrate. The gas introduction means has: a gas introduction nozzle which is disposed in the processing chamber; a gas rectifier nozzle which is connected to an end of the gas introduction nozzle and has a gas introduction port for introducing the processing gas into the processing chamber; and a filter which is arranged inside gas rectifier nozzle. The processing gas is introduced to the gas rectifier nozzle from the gas introduction nozzle through the filter and is introduced into the processing chamber from the gas introduction port. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010199160(A) |
申请公布日期 |
2010.09.09 |
申请号 |
JP20090039906 |
申请日期 |
2009.02.23 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
TAKEBAYASHI YUJI;OKADA ITARU;NAKAGAWA TAKASHI |
分类号 |
H01L21/31;C23C16/455;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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