| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method and apparatus for manufacturing a semiconductor device that can be manufactured while restraining an attachment to a substrate surface. <P>SOLUTION: The method for manufacturing the semiconductor device includes processes for forming a film on the surface of the substrate, and spraying gas toward a rear face 2b from above the rear face 2b on the opposite side to the front face of the substrate to clean the rear face 2b. In the cleaning process, gas infiltrating under the substrate is controlled not to rise to the rear face 2b of the substrate. The apparatus for manufacturing the semiconductor device includes a placing section 102, a gas generating section 103 and a sealed container 101. The placing section 102 places the substrate S. The gas generating section 103 is disposed above the placing section 102, and sprays gas toward the substrate S placed on the placing section 102. A gas control section is located below the placing section 102 and controls such that the gas infiltrating downward does not rise. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
