| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element of excellent characteristic, with a manufacturing cost being reduced. SOLUTION: The manufacturing method of a semiconductor element includes a GaN semiconductor layer forming step (S10), an electrode layer forming step (S100), a step (S20) for forming an Al film on the GaN semiconductor layer, steps (S30 and S40) for forming a mask layer comprising a material whose etching speed is lower than a material constituting the Al film, a step (S50) for forming a ridge part using the mask layer as a mask, a step (S60) for receding the position of a side wall of an end face of Al film beyond the position of the side wall of the mask layer, a step (S70) for forming a protective film comprising the material whose etching speed is lower than the material constituting the Al film on the side surface of the ridge part and on the upper surface of the mask layer, and a step (S80) for removing a portion of the protective film formed on the upper surface of the mask layer as well as the mask layer by removing the Al film. COPYRIGHT: (C)2010,JPO&INPIT
|
