| 摘要 |
This invention is to provide a temperature sensor which can measure a precise temperature of a minute region, which can measure a temperature in a wide range from a low temperature to a high temperature, and which has a simple structure. The temperature sensor comprises a two-dimensional electron gas. A resistance of the two-dimensional electron gas is used to measure a temperature. The two-dimensional electron gas may have a heterostructure selected from the group consisting of an AlGaN/GaN system, an AlGaAs/GaAs system, an InAs/GaAs system, an InAs/GaSb/AlSb system, a SiGe/Si system, a SiC/Si system, a CdTe/HgTe/CdTe system, an InGaAs/InAlAs/InP system, and nanocrystalline silicon.
|
