SEMICONDUCTOR QUANTUM DOT AND METHOD OF FORMING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor quantum dot for maintaining the quality and shape of a nanostructure with high quality without causing a problem of a decrease in crystal quality resulting from the shape of a huge island, and a method of forming the same.

SOLUTION: The method of forming the semiconductor quantum dot forms the semiconductor quantum dot by a self-organizing mechanism, wherein a layer is formed at ≥1 ML/s (monolayer per second) as a crystal growing rate of the quantum dot D and/or a crystal growing speed of a buried layer L4.

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