IMAGE SENSOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR IMAGE SENSOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor image sensor.

SOLUTION: The semiconductor image sensor includes a first and a second semiconductor substrates. A pixel array and a controlling circuit are formed in the first surface of the first substrate. A mutually connecting layer is formed on the first surface of the first substrate and electrically connects the control circuit to the pixel array. An uppermost conductive layer is formed on the mutually connecting layer, so as to be electrically connected, at least to either one of the controlling circuit and the pixel array via the mutually connecting layer. The surface of the second substrate is connected to the uppermost conductive layer. A conductive through-silicon via (TSV) penetrates the second substrate to be electrically connected to the uppermost conductive layer. A terminal is formed on the surface opposite to the second substrate to be electrically connected to the TSV.

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