| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent an in-plane temperature of a wafer held during ion implantation from becoming uneven, and to uniformize in-plane film thicknesses of both an SOI layer and a BOX layer. Ž<P>SOLUTION: At oxygen ion implanting steps in manufacture of a SIMOX wafer, a path is formed inside or on a back surface of a wafer holding means, and oxygen ions are implanted while heating an outer peripheral portion of a wafer that is in contact with the wafer holding means by flowing a heated fluid through this path. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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