发明名称 |
NONVOLATILE MEMORY DEVICE |
摘要 |
A vertical NAND string nonvolatile memory device can include an upper dopant region disposed at an upper portion of an active pattern and can have a lower surface located a level higher than an upper surface of an upper selection gate pattern. A lower dopant region can be disposed at a lower portion of the active pattern and can have an upper surface located at a level lower than a lower surface of a lower selection gate pattern.
|
申请公布号 |
US2010224929(A1) |
申请公布日期 |
2010.09.09 |
申请号 |
US20100718108 |
申请日期 |
2010.03.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG JAEHUN;KIM HANSOO;JANG JAEHOON;SHIM SUNIL;LEE SUYOUN |
分类号 |
H01L29/792;H01L29/788 |
主分类号 |
H01L29/792 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|