| 摘要 |
An inspection method for a semiconductor substrate includes irradiating an inspection beam on wires formed on a semiconductor substrate, detecting a secondary beam emitted from the semiconductor substrate, generating a contrast image, which indicates a state of an inspection surface of the semiconductor substrate, according to a gray level corresponding to signal intensity of the secondary beam, specifying a wire as an inspection target and a wire as a non-inspection target and acquiring a position and a dimension of the wire as the non-inspection target and a gray level corresponding to a wire non-forming area, replacing an image of the wire as the non-inspection target in the contrast image with an image having the gray level corresponding to the wire non-forming area, and inspecting, based on the contrast image after the replacement processing, a defect of the wire as the inspection target.
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