发明名称 VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus which surely eliminates flaky deposits that have fallen on a susceptor, without causing the turbulence and curling up of a purge gas on the susceptor regardless of a size of the susceptor, consequently keeps the uniformity of temperature of a substrate, can obtain a highly reproducible film quality and can enhance its availability factor, and to provide a vapor deposition method therefor. SOLUTION: This vapor deposition apparatus has a flow-rate control device 6 for individually controlling amounts of a spouted gas to a plurality of sectioned regions by which a plurality of gas-spouting holes in a shower head 14 are concentrically sectioned from the center part toward the outer perimeter. The flow-rate control device 6 makes the purge gas spouted in a shower form from the gas-spouting holes of the shower head 14 toward an in-plane region of the susceptor 13 which faces to the shower head 14, while individually changing the flow rates for the plurality of the regions, before a tray 12 is mounted on the susceptor 13. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010196102(A) 申请公布日期 2010.09.09
申请号 JP20090041148 申请日期 2009.02.24
申请人 SHARP CORP 发明人 TANAKA NOBUMASA;SAKAGAMI HIDEKAZU
分类号 C23C16/44;C23C14/00;C23C14/54;C23C16/455;C23C16/52;H01L21/205;H01L21/285 主分类号 C23C16/44
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