发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a first metal layer disposed on a semiconductor substrate; an insulating layer disposed on the first metal layer; and a second metal layer disposed on the insulating layer and having an electrode pad surface exposed to the outside, wherein a recess is disposed in the insulating layer and the second metal layer; and at least the second metal layer is disposed in the recess of the insulating layer.
申请公布号 US2010224997(A1) 申请公布日期 2010.09.09
申请号 US20100715826 申请日期 2010.03.02
申请人 FUJITSU MICROELECTRONICS LIMITED 发明人 SAITO NORIAKI;SAWADA TOYOJI
分类号 H01L23/522;H01L23/48 主分类号 H01L23/522
代理机构 代理人
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