发明名称 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
摘要 A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of fluorene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.
申请公布号 US2010227274(A1) 申请公布日期 2010.09.09
申请号 US20100720098 申请日期 2010.03.09
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 HATAKEYAMA JUN;HASEGAWA KOJI;TACHIBANA SEIICHIRO
分类号 G03F7/004;G03F7/20 主分类号 G03F7/004
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