RESIN COMPOSITION, RESIST COMPOSITION, AND FORMATION METHOD FOR RESIST PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a resist composition being excellent in photo-sensitivity, having less side etching and being excellent in etching-resistance at a thin film, especially etching-resistance under an etching condition using an etching liquid of a strong acid.

SOLUTION: The resin composition contains an unsaturated group-containing polycarboxylic acid resin (A) obtained by reacting a saturated or unsaturated polybasic acid anhydride (c) and a compound (d) having an ethylenic unsaturated group and an isocyanate group with a product (I) obtained by reacting an epoxy compound (a) having two or more epoxy groups in one molecule obtained by reacting a bisphenol type epoxy resin (a1) with a dibasic acid (a2) with a compound (b) having one or more hydroxyl groups and one carboxyl group in the molecule. The resist composition and the resist pattern formation method using the resin composition are provided.

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