| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device combining adaptability to large electric power and a lead-free state, and high heat fatigue life performance in a power semiconductor device such as a rectifier. <P>SOLUTION: The semiconductor device is formed by laminating a semiconductor chip, a base electrode and a lead electrode facing each other with the semiconductor chip held in between, and a joint layer for electrically joining them, and sealing the semiconductor chip, the joint layer, a part of the base electrode and a part of the lead electrode with sealing resin. The sealing resin has a linear expansion coefficient within a range of -2 ppm/°C to +2.5 ppm/°C from the linear expansion coefficient of the base electrode. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
