发明名称 |
DUAL-DIELECTRIC MIM CAPACITOR FOR SYSTEM-ON-CHIP APPLICATION |
摘要 |
PROBLEM TO BE SOLVED: To provide a dual-dielectric MIM capacitor for system-on-chip applications. SOLUTION: An integrated circuit structure includes a chip having a first region and a second region. A first metal-insulator-metal (MIM) capacitor is formed in the first region. The first MIM capacitor includes: a first bottom electrode; a first top electrode over the first bottom electrode; and a first capacitor insulator disposed between and adjoined with the first bottom electrode and the first top electrode. A second MIM capacitor is in the second region and positioned at the substantially same level with the first MIM capacitor. The second MIM capacitor includes: a second bottom electrode; a second top electrode over the second bottom electrode; and a second capacitor insulator disposed between and adjoined with the second bottom electrode and the second top electrode. The second capacitor insulator is different from the first capacitor insulator. The first top electrode and the first bottom electrode may be formed simultaneously with the second top electrode and the second bottom electrode, respectively. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010199584(A) |
申请公布日期 |
2010.09.09 |
申请号 |
JP20100034945 |
申请日期 |
2010.02.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD |
发明人 |
CHING KUO-CHENG;TU KUO-CHI |
分类号 |
H01L21/822;H01L21/8242;H01L21/8244;H01L27/04;H01L27/10;H01L27/108;H01L27/11 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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