| 摘要 |
PROBLEM TO BE SOLVED: To control p-type carrier concentration of a group III-V compound semiconductor while reducing usage of a group V raw material. SOLUTION: The method includes the steps of: installing a base wafer in a reaction vessel; and epitaxially growing a group III-V compound semiconductor on the base wafer while supplying an impurity gas including a group III raw material composed of a p-type group III organic metal compound, a group V raw material composed of a group V element, and impurities which are doped in a semiconductor to be donors. In the step of epitaxially growing the p-type group III-V compound semiconductor on the base wafer, flow rate of the impurity gas and flow rate ratio of the group V raw material to the group III raw material are set so that a product of N×d (cm<SP>-2</SP>) of the residual carrier concentration N (cm<SP>-3</SP>) and the thickness d (cm) of the p-type group III-V compound semiconductor is equal to or smaller than 8.0×10<SP>11</SP>. COPYRIGHT: (C)2010,JPO&INPIT |
