| 摘要 |
A spin-transfer magnetic memory includes a magnetoresistive element having a pinned layer, a free layer and a tunnel insulating layer provided between the pinned layer and the free layer, a bit line connected to one terminal of the magnetoresistive element, a select transistor having a current path whose one terminal is connected to the other terminal of the magnetoresistive element, a source line connected to the other terminal of the current path of the select transistor, and a pulse generation circuit passing a microwave pulse current through the magnetoresistive element, and assisting a magnetization switching of the free layer in a write operation.
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