发明名称 |
Semiconductor device and associated methods of manufacture |
摘要 |
Provided are a semiconductor device and a method of fabricating the same. The method includes forming a metal nitride layer and a metal oxide layer on a semiconductor substrate to be in contact with each other, and annealing the substrate including the metal nitride layer and the metal oxide layer to form a metal oxynitride layer.
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申请公布号 |
US2010227479(A1) |
申请公布日期 |
2010.09.09 |
申请号 |
US20100660793 |
申请日期 |
2010.03.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SUNJUNG;LEE JONGCHEOL;KOO BONYOUNG;HWANG WANSIK;LEE JOON GON;KIM JUNGHYEON |
分类号 |
H01L21/3105 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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