| 摘要 |
A through-silicon via structure includes a substrate with a first side and a second side, a through-silicon hole connecting the first side and the second side and filled with a conductive material, a passivation layer disposed on and contacting the first side and covering the through-silicon hole, and a protection ring surrounding but not contacting the through-silicon hole and exposed by the first side and the second side. The protection ring is filled with an insulating material.
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