| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor epitaxial wafer and a method of manufacturing the same, which can improve quality of crystal, simplify a process, and reduce a cost by improving a material of a metallic substrate and improving an epitaxial structure and a process of thermal cycle anneal heat treatment. <P>SOLUTION: The compound semiconductor epitaxial wafer has a metallic substrate, a first silicon buffer layer formed on the metallic substrate, a second compound semiconductor buffer layer formed on the first silicon buffer layer, a third compound semiconductor buffer layer which is formed on the second compound semiconductor buffer layer and is subjected to first heat treatment process, a first compound semiconductor epitaxial layer formed on the third compound semiconductor buffer layer, and a second compound semiconductor epitaxial layer which is formed on the first compound semiconductor epitaxial layer and is subjected to second heat treatment process. <P>COPYRIGHT: (C)2010,JPO&INPIT |
