| 摘要 |
PROBLEM TO BE SOLVED: To provide a super junction Schottky diode which has high-speed switching characteristics and low ON resistance characteristics, and improves tradeoff relation between ON resistance and a leakage current. SOLUTION: The superjunction Schottky diode 10 includes: a parallel pn layer 1 where a laminar or columnar n-type drift region 1a and p-type partition region 1b vertically formed on one principal surface of an n-type semiconductor layer 3 are alternately arranged on the principal surface in a direction parallel to that principal surface; an n-type first surface region 2a which comes into contact with a principal surface of the n-type drift region 1a and has higher specific resistance than the n-type drift region 1a; an n-type second surface region 2b which comes into contact with the principal surface of a p-type partition region 1b and the side surface of the n-type first surface region 1a and has higher specific resistance than the n-type first surface region 1a; an anode electrode 4 which comes into Schottky-contact with principal surfaces of n type first surface regions 2a and second surface regions 2b; and a cathode electrode 5 which comes into ohmic-contact with the other principal surface of the n-type semiconductor layer. COPYRIGHT: (C)2010,JPO&INPIT |
