发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS WITH USING NON-PLANAR TYPE OF TRANSISTORS
摘要 Static random access memory cells and methods of making static random access memory cells are provided. The static random access memory cells contain two non-planar pass-gate transistors, two non-planar pull-up transistors, two non-planar pull-down transistors. A portion of a fin of the non-planar pull-up transistor is electrically connected to a portion of a fin of the non-planar pull-down transistor by an assist-bar. The methods involve forming an assist-fin between fins of a non-planar pull-up transistor and a non-planar pull-down transistor and between gate electrodes, and widening a width of the assist-fin to form the assist-bar so that a portion of the fin of non-planar pull-up transistor is electrically connected to a portion of the fin of non-planar pull-down transistor via the assist-bar.
申请公布号 US2010224943(A1) 申请公布日期 2010.09.09
申请号 US20090399197 申请日期 2009.03.06
申请人 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. 发明人 KAWASAKI HIROHISA
分类号 H01L29/00;H01L21/00 主分类号 H01L29/00
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