| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a pattern having a good feature while decreasing roughness generating in a resist pattern. <P>SOLUTION: A resist film 102 is formed on a substrate 101, and the formed resist film 102 is subjected to pattern exposure by selectively irradiating with exposure light. Then, the resist film 102 after the pattern exposure is heated and development is performed to the heated resist film 102 to form a resist pattern 102a from the resist film 102. The resist material constituting the resist film 102 contains an ionic photoacid generator, a first polymer containing an acid leaving group and a hydrophilic group, and a molecule or a second polymer having lower affinity to the photoacid generator compared to the first polymer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
