发明名称 POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition, from which a first resist pattern, in a double patterning process, hardly influenced by the second patterning is formed, and to provide a method for forming a resist pattern by using the positive resist composition. <P>SOLUTION: The positive resist composition to be used for forming a first resist film in a double pattering process contains: a base component (A) the solubility of which with an alkali developing solution is increased by an action of an acid; an acid generator component (B) generating an acid by exposure; and a fluorine-containing compound component (F). The component (F) contains at least one fluorine-containing resin component selected from a group consisting of fluorine-containing polymer compounds (F1) having only a structural unit (f1) including a base-dissociable group, and fluorine-containing polymer compounds (F2) having the above structural unit (f1) and a structural unit (f2) derived from an acrylate including a specified group in a side chain. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010197689(A) 申请公布日期 2010.09.09
申请号 JP20090042194 申请日期 2009.02.25
申请人 TOKYO OHKA KOGYO CO LTD 发明人 YOKOYA JIRO;TAKESHITA MASARU;YOSHII YASUHIRO;SAITO HIROKUNI;NAKAMURA TAKESHI
分类号 G03F7/004;C08F12/22;C08F20/26;G03F7/039;H01L21/027 主分类号 G03F7/004
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