| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory which improves the operability. <P>SOLUTION: The semiconductor memory is provided with a memory cell array 6 which includes a plurality of memory cells MT, each including a charge storage layer and control gate and being capable of holding not less than two levels of data, and having its current connected in series; bit lines BL, each of which is electrically connected to one end of the current path of the memory cells MT; a first voltage generation unit 10, which can supply to the bit lines BT a first voltage Vext supplied externally or a third voltage VDD, which is obtained by stepping down a second voltage Vext supplied externally and higher than the first voltage and which has potential equivalent to the first voltage Vext; a second voltage generation unit 9, which can supply a fourth voltage VDDSA higher than the first voltage VDD to the bit lines. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
