SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element having an excellent characteristic. SOLUTION: The semiconductor element includes: an electron running layer formed of AlxGayIn1-x-yN (0≤x≤1, 0≤y≤1, 0≤1-x-y≤1) of a thickness below a critical film thickness with respect to at least AlN, or SiC of a thickness below a critical film thickness with respect to at least AlN on AlN formed on an AlN substrate or SiC substrate or formed on a GaN substrate; and an AlzGa1-zN (0