发明名称 NITRIDE SEMICONDUCTOR SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method by which discrimination of the front and the back is visually possible even if IF process is omitted and removing of processing deformation of the end face part is possible. <P>SOLUTION: In the transparent nitride semiconductor substrate 10 in which a face where a semiconductor element is formed is a surface 11, the opposite side of the surface 11 is a back face 12 and a face connected with the surface 11 and the back face 12 is an end face 13, the end face 13 inclines in ranging from the surface 11 to the back face 12. At the cross section of thickness direction of the substrate 10 passing through the centers of the surface 11 and the back face 12 of the nitride semiconductor substrate 10, when the angle formed by the surface 11 and the end face 13 is &theta;1 and the angle formed by the back face 12 and the end face 13 is &theta;2, &theta;1>&theta;2 and the difference between &theta;1 and &theta;2 is 10&deg; or more. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010195598(A) 申请公布日期 2010.09.09
申请号 JP20090038844 申请日期 2009.02.23
申请人 HITACHI CABLE LTD 发明人 IKEDA TAKESHI
分类号 C30B29/38;B24B9/00;C30B33/00;H01L21/304;H01L33/32;H01S5/323 主分类号 C30B29/38
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